Display device having a bent portion

ABSTRACT

A display device includes a display area and a peripheral area. A display layer includes a plurality of display elements arranged thereon. A thin-film encapsulation layer is arranged on the display layer and includes first, second, and third encapsulation layers. The second encapsulation layer is on the first encapsulation layer. The third encapsulation layer is on the second encapsulation layer. A touch sensing layer is arranged on the thin-film encapsulation layer and includes touch electrodes and trace lines. The display area is partially bent about an axis, and the third encapsulation layer is bent along the axis and has a structure in which a first layer and a second layer are alternately stacked. The first layer includes an inorganic insulating material, and the second layer includes a silicon carbon compound material.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2020-0027979, filed on Mar. 5, 2020, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

TECHNICAL FIELD

The present disclosure relates to a display device, and moreparticularly, to a display device in which a portion of a display areais bent.

DISCUSSION OF THE RELATED ART

Unlike a liquid crystal display (LCD) device that requires the use of aseparate light source, such as a backlight device, an organiclight-emitting diode (OLED) display device is self-luminous andtherefore can display an image without the use of a separate lightsource. Therefore, because a separate light source is not required, athickness and weight of the OLED display device may be reduced, ascompared to that of an LCD. In addition, an organic light-emitting diodedisplay device has other desirable characteristics such as low powerconsumption, high brightness, and high respond speeds, as compared tomany LCDs.

SUMMARY

A display device includes a display area and a peripheral area. Theperipheral area at least partially surrounds the display area. Thedisplay device includes a display layer including a plurality of displayelements arranged within the display area. A thin-film encapsulationlayer is disposed on the display layer and includes a firstencapsulation layer, a second encapsulation layer disposed on the firstencapsulation layer, a third encapsulation layer disposed on the secondencapsulation layer, and a touch sensing layer disposed on the thin-filmencapsulation layer and including touch electrodes and trace lines. Thedisplay area is at least partially bent, and the third encapsulationlayer is bent along the bending of the display area and has a structurein which a first layer and a second layer are alternately stacked. Thefirst layer includes an inorganic insulating material, and the secondlayer includes a silicon carbon compound material.

A thickness of the second layer may be greater than a thickness of thefirst layer.

The second layer may include silicon oxycarbide (SiOC_(y)) or siliconoxide (SiO_(x)C_(y)H_(z)) containing carbon and hydrogen.

The first layer may include an inorganic insulating material includingsilicon.

The first layer may include silicon nitride, silicon oxide, or siliconoxynitride.

An edge of the first layer may extend further toward the peripheral areathan an edge of the second layer extends toward the peripheral area.

The touch sensing layer may include a conductive layer including atleast one of the touch electrodes or the trace lines, a first touchinsulating layer disposed between the thin-film encapsulation and theconductive layer, and a second touch insulating layer covering theconductive layer and including an organic material.

The first touch insulating layer may include an organic insulatingmaterial or a silicon carbon compound material.

The display device may further include an auxiliary layer arranged on abottom surface of the conductive layer facing the first touch insulatinglayer, the auxiliary layer including an inorganic insulating material.

The touch sensing layer may further include a second conductive layerdisposed between the first touch insulating layer and the second touchinsulating layer, and a third touch insulating layer disposed betweenthe conductive layer and the second conductive layer.

The third touch insulating layer may include a layer including aninorganic insulating material and a layer including a silicon carboncompound material.

A thickness of the layer including the silicon carbon compound materialmay be greater than a thickness of the layer including the inorganicinsulating material.

The peripheral area may include a bent area, and the first touchinsulating layer may cover the bent area.

Each of the trace lines may include an inner portion, an outer portion,and a connection portion. The inner portion and the outer portion may berespectively arranged on two opposite sides of the bent area with thebent area disposed therebetween. The connection portion may be connectedto both the inner portion and the outer portion through contact holesand the connection portion may connect the inner portion to the outerportion.

The display area may include a main display area, a plurality of lateraldisplay areas, and a plurality of edge display areas. The plurality oflateral display areas may constitute an image surface that is differentfrom the main display area. The plurality of edge display areas mayconnect the main display area to the plurality of lateral display areas.

A display device includes a display area and a peripheral area. Theperipheral area at least partially surrounds the display area. Thedisplay device includes a display layer including a plurality of displayelements in the display area, a thin-film encapsulation layer disposedon the display layer and including a first encapsulation layer, a secondencapsulation layer disposed on the first encapsulation layer, a thirdencapsulation layer disposed on the second encapsulation layer, and atouch sensing layer disposed on the thin-film encapsulation layer andincluding a conductive layer and a touch insulating layer. Theconductive layer includes at least one of touch electrodes or tracelines. The display area is at least partially bent. At least one of thefirst encapsulation layer, the third encapsulation layer, or the touchinsulating layer is bent along the bending of the display area andincludes a silicon carbon compound material.

The second encapsulation layer may include an organic insulatingmaterial, and at least one of the first encapsulation layer or the thirdencapsulation layer may have a structure in which a first layer and asecond layer are alternately stacked. The first layer may include aninorganic insulating material that includes silicon, and the secondlayer may include a silicon carbon compound material.

A thickness of the second layer may be greater than a thickness of thefirst layer.

The first layer may include silicon nitride, silicon oxide, or siliconoxynitride, and the second layer may include silicon oxycarbide(SiOC_(y)) or silicon oxide (SiO_(x)C_(y)H_(z)) containing carbon andhydrogen.

The peripheral area may include a bent area and a pad, the pad beingspaced apart from the display area with the bent area disposedtherebetween, and an edge of the thin-film encapsulation layer may bebetween the display area and the bent area.

An edge of the first layer may extend further toward the peripheral areathan an edge of the second layer extends toward the peripheral area.

The touch insulating layer may include a first touch insulating layerand a second touch insulating layer. The second touch insulating layermay be disposed on the first touch insulating layer and may include anorganic insulating material. The conductive layer may be disposedbetween the first touch insulating layer and the second touch insulatinglayer.

The first touch insulating layer may include a silicon carbon compoundmaterial and the display device may further include an auxiliary layerdisposed on a bottom surface of the conductive layer facing the firsttouch insulating layer. The auxiliary layer may contact the first touchinsulating layer and the conductive layer.

The auxiliary layer may include an inorganic insulating material.

The touch sensing layer may further include a second conductive layerdisposed between the first touch insulating layer and the second touchinsulating layer, and a third touch insulating layer disposed betweenthe conductive layer and the second conductive layer.

At least one of the first touch insulating layer or the third touchinsulating layer may include a silicon carbon compound material.

The third touch insulating layer may include a layer including aninorganic insulating material and a layer including a silicon carboncompound material.

The peripheral area may include a bent area and at least one of thefirst touch insulating layer or the second touch insulating layer mayextend to the bent area.

Each of the trace lines may include an inner portion, an outer portion,and a connection portion, the inner portion and the outer portion beingrespectively arranged on two opposite sides of the bent area with thebent area disposed therebetween. The connection portion may be connectedto both the inner portion and the outer portion through contact holesand may connect the inner portion to the outer portion.

A display device includes a display area that is bent about a bendingaxis and a peripheral area at least partially surrounding the displayarea. A thin-film encapsulation layer is disposed on the display layer.A touch sensing layer is disposed on the thin-film encapsulation layer.The thin-film encapsulation layer is bent along the bending axis. Thethin-film encapsulation layer includes an inorganic insulating materialand a silicon carbon compound material.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the present disclosure and many of theattendant aspects thereof will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a plan view illustrating a display device according to anembodiment of the present disclosure;

FIG. 2 is a perspective view illustrating the display device of FIG. 1 ;

FIG. 3A is a cross-sectional view illustrating the display device takenalong line IIIA-IIIA′ of FIG. 2 ;

FIG. 3B is a cross-sectional view illustrating the display device takenalong line IIIB-IIIB′ of FIG. 2 ;

FIG. 4 is a plan view illustrating a process of manufacturing a displaydevice according to an embodiment of the present disclosure;

FIG. 5 is an equivalent circuit diagram illustrating a pixel of adisplay device;

FIG. 6 is a plan view illustrating a process of manufacturing a displaydevice according to an embodiment of the present disclosure;

FIG. 7 is a cross-sectional view illustrating a touch sensing layertaken along lines VIIa-VIIa′ and VIIb-VIIb′ of FIG. 6 ;

FIG. 8A is a plan view illustrating a portion of a first conductivelayer of a touch sensing layer,

FIG. 8B is a plan view illustrating a portion of a second conductivelayer of a touch sensing layer;

FIG. 9 is a cross-sectional view illustrating a display device accordingto an embodiment of the present disclosure;

FIGS. 10A to 10D are enlarged cross-sectional views illustrating aregion X of FIG. 9 ;

FIGS. 11A to 11D are enlarged cross-sectional views illustrating aregion XI of FIG. 9 ;

FIG. 12 is a view of a cross-section illustrating a trace line passingacross a peripheral area in a display device according to an embodimentof the present disclosure;

FIG. 13 is a cross-sectional view illustrating a display deviceaccording to an embodiment of the present disclosure;

FIG. 14 is an enlarged view illustrating a region XIV of FIG. 13 ;

FIG. 15 is a plan view illustrating a display device according to anembodiment of the present disclosure;

FIG. 16 is a cross-sectional view illustrating a display deviceaccording to an embodiment of the present disclosure;

FIG. 17 is an enlarged view illustrating a region XVII of FIG. 16 ; and

FIGS. 18A to 18C are enlarged views illustrating a region XVIII of FIG.16 .

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout the specification and thefigures. In this regard, the present embodiments may have differentforms and might not necessarily be limited to the descriptions set forthherein. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. Throughoutthe disclosure, the expression “at least one of a, b or c” indicatesonly a, only b, only c, both a and b, both a and c, both b and c, all ofa, b, and c, or variations thereof.

Hereinafter, embodiments of the present disclosure are described indetail with reference to the accompanying drawings. When description ismade with reference to the drawings, like reference numerals may be usedfor like or corresponding elements. Thus, to the extent that adescription of an element has been omitted, it may be understood thatthe element is at least similar to a corresponding element that isdescribed elsewhere in the specification.

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises” and/or“comprising” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components. However, the term “consisting of” usedherein specifies that the presence of additional elements is precluded.

It will be understood that when a layer, region, or component isreferred to as being “formed on,” another layer, region, or component,it can be directly or indirectly formed on the other layer, region, orcomponent. That is, for example, intervening layers, regions, orcomponents may be present.

Sizes of elements in the drawings may be exaggerated or reduced forconvenience of explanation.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

It will be understood that when a layer, region, or component isreferred to as being “connected” to another layer, region, or component,it may be “directly connected” to the other layer, region, or componentand/or may be “indirectly connected” to the other layer, region, orcomponent with other layer, region, or component interposedtherebetween. For example, it will be understood that when a layer,region, or component is referred to as being “electrically connected” toanother layer, region, or component, it may be “directly electricallyconnected” to the other layer, region, or component and/or may be“indirectly electrically connected” to other layer, region, or componentwith other layer, region, or component interposed therebetween.

In the present specification, a term “compound material” may denote amaterial including two or more different elements that are chemicallycombined. A term “silicon compound material” may denote a materialincluding a silicon element and one or more different elements. A term“silicon carbon compound material” may denote a material including asilicon element, a carbon element, and one or more different elements.

In the present specification, a term “ternary compound material” maydenote a material essentially including three different elements. Thoughthe term “ternary compound material” may denote a material essentiallyincluding three different elements, it should be understood that aternary compound material may also include a trace impurity element.

In the present specification, a term “silicon carbon ternary compoundmaterial” may denote a material essentially including a silicon element,a carbon element, and an additional different element. Though the term“silicon carbon ternary compound material” may denote a materialessentially including a silicon element, a carbon element, and anadditional different element, a silicon carbon ternary compound materialmay also include a trace impurity element.

In the present specification, a term “quaternary compound material” maydenote a material essentially including four different elements. Thoughthe term “quaternary compound material” may denote a materialessentially including four different elements, it should be understoodthat a quaternary compound material may also include a trace impurityelement

In the present specification, a term “silicon carbon quaternary compoundmaterial” may denote a material including a silicon element, a carbonelement, and two additional different elements. Though the term “siliconcarbon quaternary compound material” may denote a material essentiallyincluding a silicon element, a carbon element, and two additionalelements. It should be understood that a silicon carbon quaternarycompound material may also include a trace impurity element.

FIG. 1 is a plan view illustrating a display device 1 according to anembodiment of the present disclosure, and FIG. 2 is a perspective viewillustrating the display device 1 of FIG. 1 .

As shown in FIG. 1 , the display device 1 may include a display area DAand a peripheral area PA, pixels P being in the display area DA, and theperipheral area PA being outside the display area DA. The peripheralarea PA may include a non-display area in which an image is notdisplayed. Various elements may be disposed within the non-display areasuch as a driver, etc. configured to provide an electrical signal orpower to pixels P. The peripheral area PA may include a pad PAD, whichis a region to which an electronic element or a printed circuit board,etc. may be electrically connected.

The plan view shown in FIG. 1 may include a shape of a substrate 100included in the display device 1. For example, the substrate 100 mayinclude a first region and a second region, the first regioncorresponding to the display area DA, and the second regioncorresponding to the peripheral area PA.

The display device 1 may be included in an electronic apparatusconfigured to display an image. In the display device 1, at least aportion of the display area DA may be bent and at least a portion of theperipheral area PA may be bent. For example, the display area DA of FIG.1 may be bent around a plurality of axes, and the peripheral area PA maybe bent around at least one axis. For example, it is shown in FIG. 2that the display area DA is bent around four axes, and the peripheralarea PA is bent around one axis.

Referring to FIG. 2 , the display area DA may include a front displayarea DAF and first to fourth lateral display areas DAS1, DAS2, DAS3, andDAS4, the front display area DAF corresponding to a main display area,and the first to fourth lateral display areas DAS1, DAS2, DAS3, and DAS4constituting image surfaces (image planes) different from that of thefront display area DAF. First to fourth edge display areas DAE1, DAE2,DAE3, and DAE4 may be respectively disposed between the front displayarea DAF and the first to fourth lateral display areas DAS1, DAS2, DAS3,and DAS4.

The first edge display area DAE1 may connect the front display area DAFto the first lateral display area DAS1, the second edge display areaDAE2 may connect the front display area DAF to the second lateraldisplay area DAS2, the third edge display area DAE3 may connect thefront display area DAF to the third lateral display area DAS3, and thefourth edge display area DAE4 may connect the front display area DAF tothe fourth lateral display area DAS4.

The front display area DAF and the first to fourth lateral display areasDAS1, DAS2, DAS3, and DAS4 may each have flat image surfaces. Each ofthe first to fourth edge display areas DAE1, DAE2, DAE3, and DAE4 may bebent around its own axis so as to have a curvature.

Referring to FIGS. 1 and 2 , the peripheral area PA may include first tofourth peripheral areas PAS1, PAS2, PAS3, and PAS4 respectivelyneighboring the first to fourth lateral display areas DAS1, DAS2, DAS3,and DAS4. The first peripheral area PAS1 may neighbor the first lateraldisplay area DAS1, the second peripheral area PAS2 may neighbor thesecond lateral display area DAS2, the third peripheral area PAS3 mayneighbor the third lateral display area DAS3, and the fourth peripheralarea PAS4 may neighbor the fourth lateral display area DAS4.

The first peripheral area PAS1, the third peripheral area PAS3, and thefourth peripheral area PAS4 may be respectively disposed on the sameplanes as the first lateral display area DAS1, the third lateral displayarea DAS3, and the fourth lateral display area DAS4 that are adjacentthereto. The second peripheral area PAS2 may be bent around an axis. Thesecond peripheral area PAS2 may include a bent area PAB and a flat areaPAF. The bent area PAB may have a curvature, and the flat area PAF mayinclude a surface that is substantially flat. The flat area PAF may atleast partially overlap the front display area DAF.

FIG. 3A is a cross-sectional view illustrating the display device 1taken along line IIIA-IIIA′ of FIG. 2 , and FIG. 3B is a cross-sectionalview illustrating the display device 1 taken along line IIIB-IIIB′ ofFIG. 2 .

Referring to FIGS. 3A and 3B, the display device 1 may include thesubstrate 100 and a display layer 200, the display layer 200 beingdisposed on the substrate 100 and defining a plurality of pixels. Thedisplay layer 200 may include display elements and a transistor(s) and acapacitor(s), the transistor(s) and the capacitor(s) being connected toeach display element.

A thin-film encapsulation layer 300 may cover the plurality of pixelsover the display layer 200. The thin-film encapsulation layer 300 mayprevent the display layer 200 from being damaged by foreign substancessuch as moisture.

A touch sensing layer 400 may be arranged on the thin-film encapsulationlayer 300. The touch sensing layer 400 may be configured to obtaincoordinate information corresponding to an external input, for example,a touch event of a finger, a stylus or the like. The touch sensing layer400 may include a sensing electrode (or a touch electrode) and tracelines, the trace lines being connected to the touch electrode. The touchsensing layer 400 may be configured to sense an external input by usinga mutual capacitive method or a self capacitive method.

An optical functional layer 500 may include a reflection preventionlayer. The reflection prevention layer may reduce reflectivity of light(e.g. external light) incident toward the display layer 200 from theoutside through a window 600. The reflection prevention layer mayinclude a retarder and a polarizer. The retarder may include a film-typeretarder or a liquid crystal-type retarder. The retarder may include ahalf-wave plate λ/2 retarder and/or a quarter-wave plate λ/4 retarder.The polarizer may include a film-type polarizer or a liquid crystal-typepolarizer. The film-type polarizer may include a stretchable syntheticresin film, and the liquid crystal-type polarizer may include liquidcrystals arranged in a predetermined arrangement.

In an embodiment of the present disclosure, the reflection preventionlayer may include a structure including a black matrix and one or morecolor filters. The color filters may be arranged by taking into accountcolors of light emitted from pixels. For example, red color filters maybe configured to filter the light of red pixels, blue color filters maybe configured to filter the light of blue pixels, and green colorfilters may be configured to filter the light of green pixels. In anembodiment of the present disclosure, the reflection prevention layermay include a destructive interference structure. The destructiveinterference structure may include a first reflective layer and a secondreflective layer arranged on different layers. First-reflected light andsecond-reflected light respectively reflected by the first reflectivelayer and the second reflective layer may be destructively interferedand thus reflectivity of external light may be reduced.

The window 600 may be arranged on the optical functional layer 500. Thewindow 600 may include a transparent light-transmissive material, forexample, light transmissive glass or resin. The window 600 may becoupled to the optical functional layer 500 through an adhesive layerincluding an optical clear adhesive.

Referring to FIG. 3A, the third and fourth lateral display areas DAS3and DAS4 respectively arranged on two opposite sides of the frontdisplay area DAF may display an image in different directions from eachother. The third lateral display area DAS3 and the front display areaDAF may be connected to the third edge display area DAE3, and the fourthlateral display area DAS4 and the front display area DAF may beconnected to the fourth edge display area DAE4.

The third edge display area DAE3 may be convexly bent toward the outsideto have a third radius of curvature R3 about a third axis BAX3, and thefourth edge display area DAE4 may be convexly bent toward the outside tohave a fourth radius of curvature R4 about a fourth axis BAX4. In anembodiment of the present disclosure, the third radius of curvature R3and/or the fourth radius of curvature R4 may be about 4 mm or less. Forexample, the third radius of curvature R3 and/or the fourth radius ofcurvature R4 may be about 2 mm or less. The third radius of curvature R3and the fourth radius of curvature R4 may the same or different fromeach other.

The third and fourth peripheral areas PAS3 and PAS4 may be respectivelylocated on the same planes as the third and fourth lateral display areasDAS3 and DAS4.

Referring to FIG. 3B, the first and second lateral display areas DAS1and DAS2 respectively arranged on two opposite sides of the frontdisplay area DAF may display an image in different directions. The firstlateral display area DAS1 and the front display area DAF may beconnected to the first edge display area DAE1, and the second lateraldisplay area DAS2 and the front display area DAF may be connected to thesecond edge display area DAE2.

The first edge display area DAE1 may be convexly bent toward the outsideto have a first radius of curvature R1 about a first axis BAX1, and thesecond edge display area DAE2 may be convexly bent toward the outside tohave a second radius of curvature R2 about a second axis BAX2. In anembodiment of the present disclosure, the first radius of curvature R1and/or the second radius of curvature R2 may be about 4 mm or less. Forexample, the first radius of curvature R1 and/or the second radius ofcurvature R2 may be about 2 mm or less. The first to fourth radii ofcurvatures R1, R2, R3, and R4 may be the same or different from oneanother.

The first peripheral area PAS1 may be located on the same plane as thefirst lateral display area DAS1. A portion of the second peripheral areaPAS2, for example, the bent area PAB may be convexly bent to have afifth radius of curvature R5 about a fifth axis BAX5. In an embodimentof the present disclosure, the fifth radius of curvature R5 may be about4 mm or less. For example, the fifth radius of curvature R5 may be about2 mm or less.

The flat area PAF of the second peripheral area PAS2 may at leastpartially overlap the front display area DAF while being spaced apartfrom the front display area DAF by a predetermined interval. A portionor all of the flat area PAF might not overlap the thin-filmencapsulation layer 300, the touch sensing layer 400, the opticalfunctional layer 500, and the window 600. Edges of the thin-filmencapsulation layer 300, the touch sensing layer 400, the opticalfunctional layer 500, and the window 600 may be between the flat areaPAF and the bent area PAB. In an embodiment of the present disclosure,the touch sensing layer 400 may extend further toward the flat area PAFto cover the bent area PAB beyond the edge of the thin-filmencapsulation layer 300.

The pad PAD (see FIG. 1 ) described with reference to FIG. 1 may bearranged in the flat area PAF. The pad PAD might not cover or might notoverlap the thin-film encapsulation layer 300, the touch sensing layer400, the optical functional layer 500, and the window 600.

The thin-film encapsulation layer 300 and/or the touch sensing layer 400may include a silicon carbon compound material.

Because the display device 1 including the bent areas includes theplurality of layers stacked on the substrate 100 as described above andeach layer has a predetermined thickness, stress caused by the bendingmay be applied to the display device 1. The bending stress may affect alayer arranged away from the substrate 100 in a radial direction awayfrom an axis, the layer including the thin-film encapsulation layer 300,the touch sensing layer 400, and/or the optical functional layer 500.The thin-film encapsulation layer 300 and/or the touch sensing layer 400may be deposited on the substrate 100 without an adhesive layerinterposed therebetween. In this case, the thin-film encapsulation layer300 and/or the touch sensing layer 400 may crack due to the bendingstress. The structure may be more prone to cracks as the radii ofcurvature of the first to fourth edge display areas DAE1, DAE2, DAE3,and DAE4 are smaller. In contrast, as described below, in an embodimentof the present disclosure, because the thin-film encapsulation layer 300and/or the touch sensing layer 400 include a silicon carbon compoundmaterial, the cracking issue may be prevented or minimized.

According to one simplified embodiment of the present disclosure, thedisplay device having a display area and a peripheral area may include athin-film encapsulation layer on the display area and a touch sensinglayer on the thin-film encapsulation layer. The display area may be bentalong a bending axis. The encapsulation layer may be bent along thebending axis of the display area. The encapsulation layer may include aninorganic layer and a silicon carbon layer.

FIG. 4 is a plan view illustrating a process of manufacturing thedisplay device 1 according to an embodiment of the present disclosure,and FIG. 5 is an equivalent circuit diagram illustrating a pixel of thedisplay device 1. It is shown in FIG. 4 that a display layer is formedon the substrate 100, and the thin-film encapsulation layer 300 isformed on the display layer, the display layer including a plurality ofpixels P.

Referring to FIG. 4 , the plurality of pixels P may be arranged in thedisplay area DA. Each pixel P may include a display element, forexample, a light-emitting diode, that may emit light of a predeterminedcolor.

In an embodiment of the present disclosure, each pixel P may include anorganic light-emitting diode OLED as shown in FIG. 5 . The organiclight-emitting diode OLED may emit, for example, red, green, or bluelight or emit red, green, blue, or white light. Each organiclight-emitting diode OLED may be electrically connected to a pixelcircuit PC.

The pixel circuit PC may include a driving thin film transistor Td, aswitching thin film transistor Ts, and a storage capacitor Cst.

The switching thin film transistor Ts may be connected to a scan line SLand a data line DL and configured to transfer a data voltage input fromthe data line DL to the driving thin film transistor Td in response to aswitching voltage input from the scan line SL. The storage capacitor Cstmay be connected to the switching thin film transistor Ts and a drivingvoltage line PL and configured to store a voltage corresponding to adifference between a voltage transferred from the switching thin filmtransistor Ts and a first power voltage ELVDD supplied through thedriving voltage line PL.

The driving thin film transistor Td may be connected to the drivingvoltage line PL and the storage capacitor Cst and configured to controla driving current flowing through the organic light-emitting diode OLEDfrom the driving voltage line PL in response to a voltage stored in thestorage capacitor Cst. The organic light-emitting diode OLED may emitlight having a predetermined brightness according to the drivingcurrent. An opposite electrode (e.g. a cathode) of the organiclight-emitting diode OLED may receive a second power voltage ELVSS.

Though it is shown in FIG. 5 that the pixel circuit PC includes two thinfilm transistors and one storage capacitor, the number of thin filmtransistors or the number of storage capacitors may be variously changeddepending on the design of the pixel circuit PC.

The display layer may include lines configured to provide a signal or avoltage to the pixels P. In an embodiment of the present disclosure,FIG. 4 shows lines 230 extending from the peripheral area PA to the padPAD, the lines 230 being configured to provide a signal (e.g. a datasignal) to the pixels P. In a portion of the peripheral area PA, forexample, the second peripheral area PAS2, the lines 230 may extendacross the bent area PAB.

The lines 230 may include an inner line portion 231, an outer lineportion 232, and a connection line portion 233, the inner line portion231 and the outer line portion 232 being spaced apart from each otherwith the bent area PAB therebetween, and the connection line portion 233connecting the inner line portion 231 to the outer line portion 232. Theconnection line portion 233 may be connected to the inner line portion231 and the outer line portion 232 through contact holes.

The connection line portion 233 may include a flexible conductivematerial. Therefore, as described above with reference to FIG. 2 , theconnection line portion 233 may prevent the lines 230 from being damagedby stress caused in the case where the bent area PAB is bent. Theconductive material may be flexible and may include, for example,aluminum, etc. As used herein, the term “flexible” means able to be bentto a non-trivial degree without cracking. Anon-trivial degree of bendingis understood to be more than about 10 degrees.

The thin-film encapsulation layer 300 may have an area that is greaterthan the display area DA so as to entirely cover the display area DA.The thin-film encapsulation layer 300 might not cover a portion of theperipheral area PA, for example, the bent area PAB. For example, it isshown in FIG. 4 that a first edge 300E1 of the thin-film encapsulationlayer 300 that neighbors the pad PAD is between the bent area PAB andthe display area DA.

FIG. 6 is a plan view illustrating a process of manufacturing thedisplay device 1 according to an embodiment of the present disclosureand shows that the touch sensing layer is formed on the thin-filmencapsulation layer 300 of FIG. 4 .

Referring to FIG. 6 , the touch sensing layer may include first touchelectrodes 410, second touch electrodes 420, and trace lines 430, thefirst touch electrodes 410 and the second touch electrodes 420 beinglocated in the display area DA, and the trace lines 430 being located inthe peripheral area PA.

The first touch electrodes 410 may be arranged in a first direction(e.g. an x-direction of FIG. 6 ), and the second touch electrodes 420may be arranged in a second direction (e.g. a y-direction of FIG. 6 )intersecting with the first direction. The first touch electrodes 410arranged in the first direction may be connected to each other by afirst connection electrode 411 between neighboring first touchelectrodes 410 to constitute one sensing line. A plurality of firstsensing lines each extending in the first direction may be arranged inthe display area DA. Each of the first sensing lines may be connected tothe pad PAD through a first trace line 430-1 located in the peripheralarea PA.

The second touch electrodes 420 arranged in the second direction may beconnected to each other by a second connection electrode 421 betweenneighboring second touch electrodes 420 to constitute one sensing line.A plurality of second sensing lines each extending in the seconddirection may be arranged in the display area DA. The plurality ofsecond sensing lines may intersect with the plurality of first sensinglines. Each of the second sensing lines may be connected to the pad PADthrough a second trace line 430-2 located in the peripheral area PA.

The trace lines 430, for example, the first trace lines 430-1 and thesecond trace lines 430-2, may extend across the bent area PAB in thesecond peripheral area PAS2. Each of the trace lines 430 may include aninner portion 431, an outer portion 432, and a connection portion 433,the inner portion 431 and the outer portion 432 being spaced apart fromeach other with the bent area PAB therebetween, and the connectionportion 433 connecting the inner portion 431 to the outer portion 432.

The connection portion 433 may be connected to the inner portion 431 andthe outer portion 432 through contact holes. The connection portion 433may include a flexible conductive material. Therefore, as describedabove with reference to FIG. 2 , the connection portion 433 may preventthe trace lines 430 from being damaged by stress caused in the casewhere the bent area PAB is bent. The flexible conductive material mayinclude, for example, aluminum, etc.

FIG. 7 is a cross-sectional view illustrating the touch sensing layer400 taken along lines VIIa-VIIa′ and VIIb-VIIb′ of FIG. 6 , FIG. 8A is aplan view illustrating a portion of a first conductive layer of thetouch sensing layer 400, and FIG. 8B is a plan view illustrating aportion of a second conductive layer of the touch sensing layer 400.

Referring to FIG. 7 , the touch sensing layer 400 may include the firsttouch electrode 410, the second touch electrode 420, the firstconnection electrode 411, the second connection electrode 421 in thedisplay area DA, and the trace lines 430 in the peripheral area PA. Thetrace lines 430 may include a plurality of layers. The trace lines 430may include a first sub-trace line 430A and a second sub-trace line 430Blocated on different layers.

The touch sensing layer 400 may be located on the thin-filmencapsulation layer 300 and may include a plurality of conductivelayers. For example, the touch sensing layer 400 may include a firstconductive layer CML1 and a second conductive layer CML2. A first touchinsulating layer 401 may be arranged between the first conductive layerCML1 and the thin-film encapsulation layer 300. A second touchinsulating layer 403 may be arranged between the first conductive layerCML1 and the second conductive layer CML2. A third touch insulatinglayer 405 may be located on the second conductive layer CML2.

As shown in FIGS. 7 and 8A, the first conductive layer CML1 may includethe first connection electrode 411 located in the display area DA. Asshown in FIGS. 7 and 8B, the second conductive layer CML2 may includethe first touch electrodes 410, the second touch electrodes 420, and thesecond connection electrodes 421 located in the display area DA. Thesecond touch electrodes 420 may be connected to each other by the secondconnection electrodes 421 arranged on the same layer as the second touchelectrodes 420. The first touch electrodes 410 may be connected to eachother by the first connection electrodes 411 arranged on a layerdifferent from the first touch electrodes 410. The first connectionelectrodes 411 electrically connecting the first touch electrodes 410that neighbor each other may be connected to the neighboring first touchelectrodes 410 through a first contact hole CNT1 formed in the secondtouch insulating layer 403.

As shown in FIGS. 7 and 8A, the first conductive layer CML1 may includefirst sub-trace layers 430A located in the peripheral area PA. As shownin FIGS. 7 and 8B, the second conductive layer CML2 may include secondsub-trace layers 430B located in the peripheral area PA. The firstsub-trace layer 430A may be connected to the second sub-trace layer 430Bthrough a second contact hole CNT2 formed in the second touch insulatinglayer 403.

The first conductive layer CML1 and the second conductive layer CML2each may include metal. For example, the first conductive layer CML1 andthe second conductive layer CML2 may include molybdenum (Mo), aluminum(Al), copper (Cu), and/or titanium (Ti). The first conductive layer CML1and the second conductive layer CML2 may include a single layer or amulti-layer including the above materials. In an embodiment of thepresent disclosure, the first conductive layer CML1 and the secondconductive layer CML2 each may have a structure in which a titaniumlayer, an aluminum layer, and a titanium layer are sequentially stacked(Ti/Al/Ti).

Referring to an enlarged view illustrating FIG. 8B, the first touchelectrode 410 may have a mesh structure (or a grid structure or alattice structure) including a plurality of holes 410H. The holes 410Hmay at least partially overlap an emission area P-E of a pixel. Portionsof the first touch electrode 410 may be connected to each other to havea mesh structure and may define the holes 410H. The holes 410H may bespatially separated from each other with the portions of the first touchelectrode 410 therebetween. The holes 410H that neighbor each otheramong the plurality of holes 410H may be spatially connected to eachother.

Similarly, the second touch electrode 420 may have a grid structure (ora lattice structure) including a plurality of holes 420H. The holes 420Hmay at least partially overlap an emission area P-E of a pixel. Portionsof the second touch electrode 420 may be connected to each other to havea mesh structure and may define the holes 420H. The holes 420H may bespatially separated from each other with the portions of the secondtouch electrode 420 therebetween. The holes 420H that neighbor eachother among the plurality of holes 420H may be spatially connected toeach other.

Though it is shown in FIGS. 7 to 8B that the first touch electrode 410and the first connection electrode 411 are arranged on different layers,the embodiment is not necessarily limited thereto. For example, thefirst touch electrodes 410 and the first connection electrodes 411 maybe arranged on the same layer (e.g. the first conductive layer or thesecond conductive layer).

The second touch electrodes 420 and the second connection electrode 421may be arranged on different layers and connected to each other throughcontact holes passing through the second touch insulating layer 403.

Though it is shown in FIGS. 7 to 8B that the first and second touchelectrodes 410 and 420 are included in the second conductive layer CML2,the embodiment is not necessarily limited thereto. For example, thefirst touch electrode 410 and the second touch electrode 420 may beprovided (included) in different layers. For example, one of the firsttouch electrode 410 and the second touch electrode 420 may be providedin the first conductive layer CML1, and the other may be provided in thesecond conductive layer CML2.

FIG. 9 is a cross-sectional view illustrating the display device 1according to an embodiment of the present disclosure, FIGS. 10A to 10Dare enlarged cross-sectional views of a region X of FIG. 9 , and FIGS.11A to 11D are enlarged cross-sectional views of a region XI of FIG. 9 .

First, the display area DA of FIG. 9 is described.

The substrate 100 may include a polymer. For example, the substrate 100may include a polymer resin such as polyethersulfone, polyarylate,polyacrylate, polyetherimide, polyethylene naphthalate, polyethyleneterephthalate, polyphenylene sulfide, polyimide, polycarbonate,cellulose tri acetate, and/or cellulose acetate propionate. Thesubstrate 100 may include a single layer or a multi-layer including theabove materials. In an embodiment of the present disclosure, thesubstrate 100 may have a structure in which a base layer and aninorganic insulating layer are alternately stacked, the base layerincluding the above material, and the inorganic insulating layerincluding silicon nitride, silicon oxynitride, and/or silicon oxide. Forexample, the substrate 100 may have a structure in which the baselayer/the inorganic insulating layer/the base layer/the inorganicinsulating layer that are stacked.

A buffer layer 201, a gate insulating layer 203, a first interlayerinsulating layer 205, a second interlayer insulating layer 207, and aplanarization insulating layer 209 may be arranged on the substrate 100,the buffer layer 201 being configured to prevent impurities frompenetrating into a semiconductor layer of a thin film transistor TFT,the gate insulating layer 203 being configured to insulate semiconductorlayers of a first or second thin film transistor T1 or T2 from a gateelectrode, the first interlayer insulating layer 205 being between afirst electrode CE1 and a second electrode CE2 of a storage capacitorCst, the second interlayer insulating layer 207 being configured toinsulate a source electrode or a drain electrode of the first or secondthin film transistor T1 or T2 from the gate electrode, and theplanarization insulating layer 209 covering the thin film transistorTFT.

The buffer layer 201, the gate insulating layer 203, the firstinterlayer insulating layer 205, and the second interlayer insulatinglayer 207 may include an inorganic insulating material such as siliconnitride, silicon oxynitride, and/or silicon oxide. The planarizationinsulating layer 209 may include a layer having an approximately flattop surface and include an organic insulating material such asbenzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

The display layer 200 may include an organic light-emitting diode 220,the organic light-emitting diode 220 being electrically connected tothin film transistors, for example, the first and second thin filmtransistors T1 and T2 and the storage capacitor Cst formed between theabove-described insulating layers. The display layer 200 of FIG. 9corresponds to a cross-sectional view illustrating a pixel circuitaccording to an embodiment of the present disclosure including a greaternumber of transistors than the number of transistors included in thepixel circuit described above with reference to FIG. 4 . The first thinfilm transistor T1 of FIG. 9 may correspond to a driving thin filmtransistor, and the second thin film transistor T2 may correspond to acontrol transistor configured to operate in response to a control signalfor an operation of the organic light-emitting diode 220. In the drawingof FIG. 9 , a switching thin film transistor is omitted.

The first thin film transistor T1 may include a first semiconductorlayer Act1 and a first gate electrode G1, and the second thin filmtransistor T2 may include a second semiconductor layer Act2 and a secondgate electrode G2.

The first semiconductor layer Act1 and the second semiconductor layerAct2 may include amorphous silicon, polycrystalline silicon, an oxidesemiconductor, or an organic semiconductor material. The firstsemiconductor layer Act1 may include a channel region C1, a sourceregion S1, and a drain region D1, the source region S1 and the drainregion D1 being arranged on two opposite sides of the channel region C1.The second semiconductor layer Act2 may include a channel region C2, asource region S2, and a drain region D2, the source region S2 and thedrain region D2 being arranged on two opposite sides of the channelregion C2.

The first and second gate electrodes G1 and G2 may include alow-resistance conductive material such as molybdenum (Mo), aluminum(Al), copper (Cu), and/or titanium (Ti) and include a single layer or amulti-layer including the above materials. The first gate electrode G1and the second gate electrode G2 may be arranged on the same layer orarranged on different layers.

The second thin film transistor T2 may include a source electrode (notshown) and/or a drain electrode SD. In an embodiment of the presentdisclosure, FIG. 9 shows the drain electrode SD. The drain electrode SDmay be arranged on the same layer as a data line DL and may include thesame material as the data line DL. The drain electrode SD and the dataline DL may have a single-layered structure or a multi-layered structureincluding a conductive material having an excellent conductivity. Forexample, the drain electrode SD and the data line DL may have asingle-layered structure or a multi-layered structure including aconductive material including aluminum (Al), copper (Cu), and/ortitanium (Ti). In an embodiment of the present disclosure, the drainelectrode SD and the data line DL may have a three-layered structure ofa titanium layer/an aluminum layer/a titanium layer.

FIG. 9 shows that the first and second thin film transistors T1 and T2respectively include top-gate type thin film transistors in which thefirst and second gate electrodes G1 and G2 of the first and second thinfilm transistors T1 and T2 are respectively arranged over the first andsecond semiconductor layers Act1 and Act2. For example, the first andsecond thin film transistors T1 and T2 may respectively includebottom-gate type thin film transistors in which the first and secondgate electrodes G and G2 of the first and second thin film transistorsT1 and T2 are respectively arranged below the first and secondsemiconductor layers Act1 and Act2.

The storage capacitor Cst may at least partially overlap the first thinfilm transistor T1. In this case, the areas of the storage capacitor Cstand the first thin film transistor T1 may be increased and ahigh-quality image may be provided. For example, the first gateelectrode G1 may serve as the first electrode CE of the storagecapacitor Cst. For example, the storage capacitor Cst might not overlapthe first thin film transistor T1.

The organic light-emitting diode 220 of the display layer 200 mayinclude a pixel electrode 221, an emission layer 222, and an oppositeelectrode 223.

The pixel electrode 221 may include a reflective layer including silver(Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or acompound thereof. The pixel electrode 221 may include the reflectivelayer and a transparent conductive layer on and/or under the reflectivelayer, the reflective layer including the above material. Thetransparent conductive layer may include indium tin oxide (ITO), indiumzinc oxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium galliumoxide (IGO), or aluminum zinc oxide (AZO). In an embodiment of thepresent disclosure, the pixel electrode 221 may have a multi-layeredstructure of an ITO layer, an Ag layer, and an ITO layer that aresequentially stacked.

A pixel-defining layer 211 is arranged on the pixel electrode 221. Thepixel-defining layer 211 covers edges of the pixel electrode 221 andincludes an opening that at least partially overlaps a central portionof the pixel electrode 221. The pixel-defining layer 211 may include anorganic insulating material such as benzocyclobutene (BCB), polyimide,or hexamethyldisiloxane (HMDSO).

A spacer 213 may be formed on the pixel-defining layer 211. The spacer213 may prevent layers arranged under the spacer 213 from being damagedby a mask used during a process of forming the emission layer 222described below. The spacer 213 may include the same material as thepixel-defining layer 211.

The emission layer 222 may include, for example, an organic material.The emission layer 222 may include a polymer organic material or a lowmolecular weight organic material that emits light of a predeterminedcolor (e.g. red, green, or blue color). A functional layer may bearranged on and under the emission layer 222. The functional layer mayinclude a hole injection layer (HIL), a hole transport layer (HTL), anelectron transport layer (ETL), and/or an electron injection layer(EIL).

The opposite electrode 223 may include a conductive material having arelatively small work function. For example, the opposite electrode 223may include a (semi) transparent layer including silver (Ag), magnesium(Mg), aluminum (Al), nickel (Ni), chromium (Cr), lithium (Li), calcium(Ca), or an alloy thereof. In an embodiment of the present disclosure,the opposite electrode 223 may include silver (Ag) and magnesium (Mg).Alternatively, the opposite electrode 223 may further include a layerincluding a material such as ITO, IZO, ZnO, or In₂O₃ on the (semi)transparent layer including the above material. The opposite electrode223 may be provided as a single body to entirely cover the display areaDA.

The thin-film encapsulation layer 300 may include an organic insulatingmaterial (e.g. a polymer) and a layer including a silicon carboncompound material.

A third encapsulation layer 330 may include a silicon compound materialhaving a multi-layered structure. As shown in FIG. 10C, the thirdencapsulation layer 330 may include a first layer 331 and a second layer332 including a silicon carbon compound material.

The first layer 331 may include an inorganic insulating materialincluding, for example, silicon. The inorganic insulating materialincluding silicon may include silicon nitride (SiN_(x)), silicon oxide(SiO_(x)), and/or silicon oxynitride (SiON).

The second layer 332 may include a silicon carbon compound material. Thesilicon carbon compound material may include a silicon carbon ternarycompound material or a silicon carbon quaternary compound material. Thesilicon carbon ternary compound material may include, for example,silicon oxycarbide (SiOC_(y)) including silicon, carbon, and oxygen. Thesilicon carbon quaternary compound material may include, for example,silicon, carbon, oxygen, and hydrogen.

For example, the silicon carbon quaternary compound material may includesilicon oxide (SiO_(x)C_(y)H_(z)) containing carbon and hydrogen. Thesecond layer 332 may include silicon oxycarbide (SiOC_(y)) or siliconoxide (SiO_(x)C_(y)H_(z)) containing carbon and hydrogen. Thesematerials may have characteristics similar to those of an organicmaterial.

Silicon oxycarbide (SiOC_(y)) may have characteristics similar to thoseof an inorganic layer or characteristics similar to those of an organiclayer depending on the content of carbon. Silicon oxycarbide (SiOC_(y)),according to an embodiment of the present disclosure, includes amaterial having a relatively large content of carbon and may havecharacteristics similar to those of an organic layer.

Silicon oxide (SiO_(x)C_(y)H_(z)) containing carbon and hydrogen mayhave properties similar to those of an inorganic layer when thecomposition ratio of x is large and have properties similar to those ofan organic layer when the composition ratio of y is large. Silicon oxide(SiO_(x)C_(y)H_(z)) containing carbon and hydrogen according to anembodiment of the present disclosure includes a material including arelatively large content of carbon and may have characteristics similarto those of an organic layer.

An elastic coefficient of the second layer 332 may be less than anelastic coefficient of the first layer 331. In an embodiment of thepresent disclosure, an elastic coefficient of silicon oxide(SiO_(x)C_(y)H_(z)) may be less than 10 GPa and be easily transformedand accordingly, as described with reference to FIGS. 1 and 2 , eventhough the display area DA and/or the peripheral area PA is partiallybent, the cracking issue caused by bending stress may be prevented orminimized. In an embodiment of the present disclosure, an elasticcoefficient of silicon oxide (SiO_(x)C_(y)H_(z)) may be about 5 GPa toabout 6 GPa, and an elastic coefficient of silicon nitride (SiN_(x)) maybe about 11 GPa.

The first layer 331 and the second layer 332 may be alternately stackedand the first layer 331 may directly contact the second layer 332. Thefirst layer 331 and the second layer 332 may be formed by changing alayer-forming gas in the same chamber. For example, the first layer 331may be formed by using atomic layer deposition (ALD), and the secondlayer 332 may be formed by using chemical vapor deposition (CVD).

To prevent cracks caused by bending stress, the thickness of the secondlayer 332 may be greater than the thickness of the first layer 331. Inan embodiment of the present disclosure, the thickness of the secondlayer 332 may be about 500 Å to about 2000 Å. For example, the thicknessof the second layer 332 may be about 500 Å to about 1000 Å. Thethickness of the first layer 331 may be about 50 Å to about 300 Å. Forexample, the thickness of the first layer 331 may be about 100 Å toabout 200 Å.

In the case where one first layer 331 and one second layer 332correspond to 1 dyad, the third encapsulation layer 330 may have astacked structure of 3 dyads or more, more suitably, 3.5 dyads or more.In an embodiment of the present disclosure, it is shown in FIG. 10C thatthree pairs of the first layer 331 and the second layer 332 are stackedand one (e.g. the first layer 331) of the first layer 331 and the secondlayer 332 is stacked thereon.

It is shown in FIG. 10C that the third encapsulation layer 330 includesthe first layers 331 and the second layers 332 that are alternatelystacked and the first layer 331, which is a lowermost layer of the thirdencapsulation layer 330, contacts a second encapsulation layer 320. Forexample, the lowermost layer of the third encapsulation layer 330 mayinclude the second layer 332. In this case, the second layer 332 maycontact the second encapsulation layer 320.

Referring to FIG. 9 again, a first encapsulation layer 310 may belocated under the second encapsulation layer 320. The firstencapsulation layer 310 may include an inorganic insulating materialand/or a silicon carbon compound material. A specific structure of thefirst encapsulation layer 310 is described below with reference to FIGS.11A to 11C.

The second encapsulation layer 320 may include an organic material, forexample, an organic insulating material. The second encapsulation layer320 may include a polymer-based material. The polymer-based material mayinclude an acryl-based resin, an epoxy-based resin, polyimide, andpolyethylene. For example, the second encapsulation layer 320 mayinclude an acrylic resin, for example, polymethylmethacrylate, polyacrylic acid, etc. The second encapsulation layer 320 may be formed byhardening a monomer or coating a polymer.

The touch sensing layer 400 may include a touch insulating layer and oneor more conductive layers, the touch insulating layer including a firsttouch insulating layer 401, a second touch insulating layer 403, and athird touch insulating layer 405. In an embodiment of the presentdisclosure, FIG. 9 shows a first connection electrode 411 and a portionof the touch electrode 410, the first connection electrode 411 beingdisposed on the first touch insulating layer 401, and the touchelectrode 410 being connected to the first connection electrode 411. Asdescribed with reference to FIG. 8B, the first touch electrode 410 mayinclude a hole 410H at least partially overlapping the emission area ofthe organic light-emitting diode 220. Though FIG. 9 shows the firstconnection electrode 411 as a portion of the first conductive layer andshows the first touch electrode 410 as a portion of the secondconductive layer, elements of the first conductive layer and the secondconductive layer described above with reference to FIGS. 8A and 8B maybe respectively located on the first touch insulating layer 401 and thesecond touch insulating layer 403.

The first touch insulating layer 401 may include a silicon carboncompound material. For example, the first touch insulating layer 401 mayinclude silicon oxycarbide (SiOC_(y)) or silicon oxide(SiO_(x)C_(y)H_(z)) containing carbon and hydrogen and these materialsmay have characteristics similar to those of an organic material asdescribed above.

It is shown in FIGS. 9 and 10A that the first conductive layer, forexample, the first connection electrode 411 of the first conductivelayer is directly located on the first touch insulating layer 401. Inthis case, the first conductive layer, for example, the first connectionelectrode 411 of the first conductive layer may directly contact thefirst touch insulating layer 401.

For example, as shown in FIG. 10B, an auxiliary layer 412 may bearranged on the first conductive layer, for example, a bottom surface ofthe first connection electrode 411 of the first conductive layer. In thecase where the first touch insulating layer 401 includes siliconoxycarbide (SiOC_(y)), adhesive force between the first touch insulatinglayer 401 and the first conductive layer (for example, the firstconnection electrode 411 of the first conductive layer) may bestrengthened by the auxiliary layer 412.

The auxiliary layer 412 is not entirely formed on the first touchinsulating layer 401 and may have the same shape as the first conductivelayer including the first connection electrode 411. In this regard, theFIG. 10 shows that the auxiliary layer 412 and the first connectionelectrode 411 have substantially the same shape or same pattern. Havingthe same shape or pattern means that a shape on a plane is the same andincludes the case where a width is the same or the case where widths aredifferent depending on a difference in an etched amount during aprocess. The auxiliary layer 412 may include, for example, an inorganicinsulating layer such as a silicon nitride layer.

In an embodiment of the present disclosure, the second touch insulatinglayer 403 may include a resin material as shown in FIG. 10C. Forexample, the second touch insulating layer 403 may include a singlelayer including an acryl-based material. The second touch insulatinglayer 403 may include an acryl-based material formed at low temperature(e.g. 100° C. or less).

For example, as shown in FIG. 10D, the second touch insulating layer 403may include a silicon carbon compound material, for example, siliconoxycarbide (SiOC_(y)) or silicon oxide (SiO_(x)C_(y)H_(z)) containingcarbon and hydrogen.

For example, the second touch insulating layer 403 may include aninorganic insulating layer (a third layer 403A, hereinafter) and afourth layer 403B, the third layer 403A including silicon, and thefourth layer 403B including a silicon carbon compound material.

The third layer 403A may include an inorganic insulating material, forexample, an inorganic insulating material including silicon. Theinorganic insulating material including silicon may include siliconnitride (SiN_(x)), silicon oxide (SiO_(x)), and/or silicon oxynitride(SiON).

The fourth layer 403B may include a silicon carbon compound material,for example, silicon oxycarbide (SiOC_(y)) or silicon oxide(SiO_(x)C_(y)H_(z)) containing carbon and hydrogen. As described above,the silicon carbon compound material may have characteristics similar tothose of an organic material.

The second touch insulating layer 403 may have a structure in which thethird layer 403A and the fourth layer 403B are alternately stacked. Thethickness of the third layer 403A may be less than the thickness of thefourth layer 403B.

The third touch insulating layer 405 may include an organic insulatingmaterial (e.g. a resin material). For example, the third touchinsulating layer 405 may include a single layer including an acryl-basedmaterial. The third touch insulating layer 405 may include anacryl-based material formed at low temperature (e.g. 100° C. or less).

As described with reference to FIGS. 9 to 10D, in the case where thefirst encapsulation layer 310, the third encapsulation layer 330, thefirst touch insulating layer 401, and/or the second touch insulatinglayer 403 include a silicon carbon compound material, the cracking issuecaused by bending stress may be prevented compared to the case where thefirst encapsulation layer 310, the third encapsulation layer 330, thefirst touch insulating layer 401, and/or the second touch insulatinglayer 403 include only an inorganic insulating material.

Next, the peripheral area PA of FIG. 9 is described. FIG. 9 shows asecond peripheral area PAS2 including the bent area PAB of theperipheral area PA.

At least one inorganic insulating layer 208 arranged over the substrate100 may include an opening 2080P corresponding to the bent area PAB. Theat least one inorganic insulating layer 208 may include the buffer layer201, the gate insulating layer 203, the first interlayer insulatinglayer 205, and/or the second interlayer insulating layer 207. In anembodiment of the present disclosure, an opening 201 a of the bufferlayer 201, an opening 203 a of the gate insulating layer 203, an opening205 a of the first interlayer insulating layer 205, and an opening 207 aof the second interlayer insulating layer 207 may at least partiallyoverlap one another to constitute the opening 2080P. A width OW of theopening 2080P may be greater than a width of the bent area PAB.

An organic insulating layer 215 may be formed in the bent area PAB. Theorganic insulating layer 215 may at least partially fill the opening2080P of the inorganic insulating layer 208. The organic insulatinglayer 215 may be formed only in the bent area PAB. The organicinsulating layer 215 may include an organic insulating material such asbenzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

Because the at least one inorganic insulating layer 208 includes theopening 2080P in the bent area PAB, the occurrence of cracks in the atleast one inorganic insulating layer 208 caused by bending stress may beprevented or minimized. Because the organic insulating layer 215 may bearranged in the opening 2080P and may absorb stress that occurs whilebending occurs, the cracking issue may be prevented.

The thin-film encapsulation layer 300 may cover a portion of theperipheral area PA. A partition wall may be arranged in the peripheralarea PA, the partition wall surrounding the display area DA. Forexample, it is shown in FIG. 9 that a first partition wall PW1 and asecond partition wall PW2 are between the display area DA and the bentarea PAB. The first partition wall PW1 may have a stacked structureincluding a plurality of partition wall layers. For example, the firstpartition wall PW1 may include a first partition wall layer PL1 and asecond partition wall layer PL2. The first partition wall layer PL1 andthe second partition wall layer PL2 may respectively include the samematerials as the pixel-defining layer 211 and the planarizationinsulating layer 209. Like the first partition wall PW1, the secondpartition wall PW2 may include a stacked structure of a plurality ofpartition wall layers.

The first encapsulation layer 310 and the third encapsulation layer 330of the thin-film encapsulation layer 300 may extend toward the bent areaPAB beyond the first partition wall PW1 and the second partition wallPW2. The first encapsulation layer 310 and the third encapsulation layer330 might not pass across the bent area PAB. For example, it is shown inFIG. 9 that a first edge 300E1 of the thin-film encapsulation layer 300is disposed between the display area DA and the bent area PAB, forexample, an edge of the first encapsulation layer 310 and an edge of thethird encapsulation layer 330 are disposed between the display area DAand the bent area PAB. The second encapsulation layer 320 of thethin-film encapsulation layer 300 may be located on one side of apartition wall, for example, one side of the first partition wall PW1,and the first encapsulation layer 310 may contact the thirdencapsulation layer 330 in a region that neighbors the first edge 300E1of the thin-film encapsulation layer 300.

Referring to FIG. 11A, the first encapsulation layer 310 may have astructure different from that of the third encapsulation layer 330. Forexample, the first encapsulation layer 310 may include an inorganicinsulating material, for example, an inorganic insulating materialincluding silicon. For example, the first encapsulation layer 310 mayinclude silicon nitride (SiN_(x)), silicon oxide (SiO_(y)), and/orsilicon oxynitride (SiON), and have a single-layered structure or amulti-layered structure including the above materials. An edge portionof the first encapsulation layer 310 may contact an edge portion of thethird encapsulation layer 330.

As described with reference to FIGS. 10C and 10D, the thirdencapsulation layer 330 may include the first layer 331 and the secondlayer 332, the first layer 331 including an inorganic material, and thesecond layer 332 including a silicon carbon compound material. Aspecific structure thereof is the same as that described above.

In FIG. 11A, though the second layer 332, which is a lowermost layer ofthe third encapsulation layer 330, may directly contact the firstencapsulation layer 310, a lowermost layer of the third encapsulationlayer 330 may include the first layer 331, and the first layer 331 maydirectly contact the first encapsulation layer 310.

The first layer 331 and the second layer 332 may be formed by using thesame mask. For example, the first layer 331 and the second layer 332 maybe formed while the mask reciprocates in the same chamber. Though thefirst layer 331 and the second layer 332 are formed by using the samemask, an edge of the second layer 332 and an edge of the first layer 331may be located on different positions in an edge portion of the thirdencapsulation layer 330 by a diffusion rate of a layer-forming gasduring a process. For example, as shown in FIG. 11A, an edge 331E of thefirst layer 331 may extend further toward the peripheral area PA beyondan edge 332E of the second layer 332. Edges 3311E of the first layers331 arranged on and under the second layer 332 with the second layer 332therebetween may contact each other.

The first touch insulating layer 401 may be located on the thirdencapsulation layer 330, and as shown in FIGS. 9 and 11A, the firsttouch insulating layer 401 may extend toward an edge of the peripheralarea PA beyond the first edge 300E1 of the thin-film encapsulation layer300, for example, edges of the first and third encapsulation layers 310and 330. The first touch insulating layer 401 may cover a top surfaceand a lateral surface of the third encapsulation layer 330, and alateral surface of the first encapsulation layer 310. The first touchinsulating layer 401 may include a silicon carbon compound material, andthe second touch insulating layer 403 may include an organic insulatingmaterial, for example, a resin material including an acryl-basedmaterial.

Though it is shown in FIG. 11A that the second touch insulating layer403 includes an organic insulating material, the second touch insulatinglayer 403 may include a silicon carbon compound material such as siliconoxycarbide (SiOC_(y)) as shown in FIG. 11B. For example, the secondtouch insulating layer 403 has a stacked structure of the third layer403A and the fourth layer 403B as described above with reference to FIG.10D, the third layer 403A including an inorganic insulating material,and the fourth layer 403B including a silicon carbon compound material.

Though it is shown in FIGS. 11A and 11B that the first encapsulationlayer 310 includes an inorganic insulating material, referring to FIG.11C, the first encapsulation layer 310 may have a structure similar tothat of the third encapsulation layer 330.

The first encapsulation layer 310 may include a silicon carbon compoundmaterial as shown in FIGS. 11C and 11D. For example, the firstencapsulation layer 310 may a fifth layer 311 and a sixth layer 312, thefifth layer 311 including an inorganic insulating material, and thesixth layer 312 including a silicon carbon compound material.

The fifth layer 311 may include an inorganic insulating material, forexample, an inorganic insulating material including silicon. Theinorganic insulating material including silicon may include siliconnitride (SiN_(x)), silicon oxide (SiO_(x)), and/or silicon oxynitride(SiON).

The second layer 332 may include a silicon carbon compound material, andthe silicon carbon compound material may include a silicon carbonternary compound material or a silicon carbon quaternary compoundmaterial. The silicon carbon ternary compound material may includesilicon oxycarbide (SiOC_(y)), and the silicon carbon quaternarycompound material may include silicon oxide (SiO_(x)C_(y)H_(z))containing carbon and hydrogen. The silicon carbon compound material mayhave characteristics similar to those of an organic material.

The first encapsulation layer 310 may have a structure in which thefifth layer 311 and the sixth layer 312 are alternately stacked. Similarto that described with reference to FIG. 11A, an edge 311E of the fifthlayer 311 may extend further toward the peripheral area PA beyond anedge 312E of the sixth layer 312. In the case where one fifth layer 311and one sixth layer 312 of the first encapsulation layer 310 correspondto 1 dyad, the first encapsulation layer 310 may have the number ofstacked layers different from that of the third encapsulation layer 330.Alternatively, the first encapsulation layer 310 may have the samenumber of stacked layers as that of the third encapsulation layer 330.For example, the first encapsulation layer 310 may have a stackedstructure of 3 dyads or more, and more preferably, 3.5 dyads or more.

As shown in FIG. 11C, the sixth layer 312 may be located in a lowermostlayer of the first encapsulation layer 310, or as shown in FIG. 11D, thefifth layer 311 may be located in a lowermost layer of the firstencapsulation layer 310.

Referring to the peripheral area PA of FIG. 9 again, at least oneinsulating layer of the touch sensing layer 400, for example, the firsttouch insulating layer 401 and/or the second touch insulating layer 403may extend to pass across the bent area PAB and cover the bent area PAB.

Around the bent area PAB, the inner portion 431 of a trace line and theouter portion 432 of the trace line may be respectively arranged on twoopposite sides of the bent area PAB. The connection portion 433 mayextend to pass across the bent area PAB, the connection portion 433connecting the inner portion 431 to the outer portion 432 of the traceline.

The inner portion 431 of the trace line shown in FIG. 9 may include aportion of the trace line and have the same structure as the trace line.For example, similar to the trace line 430 (see FIG. 7 ) including thefirst sub-trace layer 430A and the second sub-trace layer 430B that aredescribed with reference to FIG. 7 , the inner portion 431 of the traceline may include a first sub-layer 431A and a second sub-layer 431B. Thefirst sub-layer 431A and the second sub-layer 431B shown in FIG. 9 mayrespectively include portions of the first sub-trace layer 430A and thesecond sub-trace layer 430B described with reference to FIG. 7 .

In an embodiment of the present disclosure, the inner portion 431 of thetrace line may include one of the first sub-layer 431A and the secondsub-layer 431B. The trace line 430 (see FIG. 7 ) may include the firstsub-trace layer 430A and the second sub-trace layer 430B, and one of thefirst sub-trace layer 430A and the second sub-trace layer 430B mayextend further toward the bent area PAB than the other. One of the firstsub-trace layer 430A and the second sub-trace layer 430B that extendsfurther toward the bent area PAB may constitute the inner portion 431.

The inner portion 431 of the trace line may be connected to theconnection portion 433 through a contact hole passing through insulatinglayers between the connection portion 433 and the inner portion 431, forexample, a contact hole passing through the first touch insulating layer401 and the second touch insulating layer 403. In an embodiment of thepresent disclosure, in the case where the inner portion 431 includes thefirst sub-layer 431A and the second sub-layer 431B, the second sub-layer4311B may be connected to the first sub-layer 431A through a contacthole of the second touch insulating layer 403, and the first sub-layer431A may be connected to the connection portion 433 through a contacthole of the first touch insulating layer 401. For example, the innerportion 431 may include one of the first sub-layer 431A and the secondsub-layer 431B, for example, include the second sub-layer 431B. In thiscase, the second sub-layer 431B may be connected to the connectionportion 433 through a contact hole passing through the first touchinsulating layer 401 and the second touch insulating layer 403.

The connection portion 433 may be connected to the outer portion 432through a contact hole passing through an insulating layer disposedbetween the outer portion 432 and the connection portion 433, forexample, through the second interlayer insulating layer 207. Though itis shown in FIG. 9 that the outer portion 432 is located on the samelayer as the second electrode CE2 of the storage capacitor Cst andincludes the same material as the second electrode CE2, the outerportion 432 may be located on the same layer as the first electrode CE1of the storage capacitor Cst or the first and second gate electrodes G1and G2 and may include the same material as the first electrode CE1 ofthe storage capacitor Cst or the first and second gate electrodes G1 andG2.

The connection portion 433 may include a flexible conductive material,for example, aluminum compared to the inner portion 431 and the outerportion 432. For example, the connection portion 433 may include thesame material as the data line DL and/or the drain electrode SD (or thesource electrode) of the display area DA. In an embodiment of thepresent disclosure, the connection portion 433 may have a three-layeredstructure of a titanium layer/an aluminum layer/a titanium layer.

An organic insulating material layer may be further arranged between theconnection portion 433 and the first touch insulating layer 401 and/oron the second touch insulating layer 403, the organic insulatingmaterial layer including a polymer. The organic insulating materiallayer may adjust a neutral surface of the display device.

FIG. 12 is a view illustrating a cross-section of a trace line passingacross the peripheral area PA in the display device 1 according to anembodiment of the present disclosure.

Referring to FIG. 12 , the trace line 430 may be located on thethin-film encapsulation layer 300 in a portion of the peripheral areaPA, for example, the third peripheral area PAS3. The first sub-tracelayer 430A of the trace line 430 may be connected to the secondsub-trace layer 430B of the trace line 430 through a second contact holeCNT2 formed in the second touch insulating layer 403. The auxiliarylayer 412 may be arranged under the first sub-trace line 430A.

As described above, in the case where the first touch insulating layer401 includes a silicon oxycarbide layer (SiOC_(y)), the auxiliary layer412 is arranged between the first conductive layer and the first touchinsulating layer 401, and accordingly adhesive force between the firstconductive layer, for example, the first connection electrode 411 andthe first touch insulating layer 401 may be strengthened. The auxiliarylayer 412 need not be entirely formed on the first touch insulatinglayer 401 and may be patterned to correspond to a bottom surface of thefirst sub-trace layer 430A. The auxiliary layer 412 may include aninorganic insulating layer, for example, such as a silicon nitridelayer.

The trace line 430 may at least partially overlap the thin-filmencapsulation layer 300, for example, the first to third encapsulationlayers 310, 320, and 330. The first encapsulation layer 310 and thethird encapsulation layer 330 may have the structure described abovewith reference to FIGS. 11A to 11D. The specific structure may be thesame as that described above. The trace lines 430 may be covered by thethird touch insulating layer 405.

Touch insulating layers of the touch sensing layer 400, for example, oneor more of the first to third touch insulating layers 401, 403, and 405may extend toward the edge of the display device 1 beyond a second edge300E2 of the thin-film encapsulation layer 300.

Though FIG. 12 shows a structure in the third peripheral area PAS3 ofthe peripheral area PA, the first peripheral area PAS1 (see FIG. 2 )and/or the fourth peripheral area PAS4 (see FIG. 2 ) may have astructure that is at least similar to that as shown in FIG. 12 .

FIG. 13 is a cross-sectional view illustrating the display device 1according to an embodiment of the present disclosure, and FIG. 14 is anenlarged view illustrating a region XIV of FIG. 13 .

Characteristics including a structure of the display area DA and aconnection structure around the bent area PAB in the peripheral area PAof FIG. 13 are the same as those described above with reference to FIGS.9 to 12 . FIG. 13 is different from FIG. 9 in the structure of thethin-film encapsulation layer 300 in the peripheral area PA. Likereference numerals are given to like elements, and differences aremainly described below.

The first encapsulation layer 310 and the third encapsulation layer 330of the thin-film encapsulation layer 300 may extend further toward theouter side than the second encapsulation layer 320. For example, it isshown in FIG. 13 that the edges of the first encapsulation layer 310 andthe third encapsulation layer 330 extend further toward the bent areaPAB beyond the edge of the second encapsulation layer 320.

The first encapsulation layer 310 may at least partially overlap andcontact the third encapsulation layer 330 in the peripheral area PA,wherein one of the edges of the first encapsulation layer 310 and thethird encapsulation layer 330 may be closer to the display area DA thanthe other edge. For example, the edge of the third encapsulation layer330 may be disposed between the first partition wall PW1 and the secondpartition wall PW2, and the edge of the first encapsulation layer 310may extend toward the outer side beyond the first partition wall PW1 andthe second partition wall PW2.

As shown in FIG. 14 , the third encapsulation layer 330 may have astructure in which the first layer 331 and the second layer 332 arealternately stacked, the first layer 331 including an inorganicinsulating material, and the second layer 332 including a silicon carboncompound material.

The first encapsulation layer 310 may be arranged along a lateralsurface of a partition wall, for example, the second partition wall PW2.The edge of the first layer 331 and the edge of the second layer 332 maycontact the first encapsulation layer 310, the edge of the first layer331 and the edge of the second layer 332 corresponding to the edges ofthe third encapsulation layer 330. The edge 331E of the first layer 331may extend further beyond the edge 332E of the second layer 332 locatedthereunder and the first layer 331 may directly contact a top surface ofthe first encapsulation layer 310. In the case where the firstencapsulation layer 310 includes an inorganic insulating material, thefirst layer 331 and the first encapsulation layer 310 may constitute acontact between inorganic insulating material layers.

FIG. 15 is a plan view illustrating the display device 1 according to anembodiment of the present disclosure.

Referring to FIG. 15 , the display device 1 may include touch electrodesof an arrangement different from the touch electrodes of a touch inputportion described with reference to FIG. 6 , for example, the first andsecond touch electrodes 410 and 420. As shown in FIG. 15 , touchelectrodes 440 arranged in a matrix configuration may be arranged in thedisplay area DA.

Each of the touch electrodes 440 may be connected to the trace line 430.Some of the trace lines 430 may pass across the display area DA. Thetrace lines 430 may extend across the bent area PAB in the secondperipheral area PAS2. Each trace line 430 may include the inner portion431, the outer portion 432, and the connection portion 433, the innerportion 431 and the outer portion 433 being spaced apart from each otherwith the bent area PAB disposed therebetween, and the connection portion433 connecting the inner portion 431 to the outer portion 432. Theconnection portion 433 may include a conductive material that is moreflexible than the inner portion 431 and the outer portion 432 andaccordingly may prevent the trace lines 430 from being damaged by stresscaused in the case where the bent area PAB is bent. The conductivematerial may be flexible and may include, for example, aluminum.

The touch electrodes 440 may have a mesh structure. As described abovein the enlarged view illustrating FIG. 8B, each touch electrode 440 mayhave a mesh structure including a hole corresponding to an emission areaof a pixel. The touch electrodes 440 may include metal, for example,molybdenum (Mo), aluminum (Al), copper (Cu), and/or titanium (Ti) andinclude a single layer or a multi-layer including the above materials.In an embodiment of the present disclosure, the touch electrodes 440each may have a structure in which a titanium layer, an aluminum layer,and a titanium layer are sequentially stacked (Ti/Al/Ti).

Each touch electrode 440 may be provided as one body with the trace line430. For example, the touch input portion described with reference toFIG. 6 may include the first and second conductive layers CML1 and CML2(see FIG. 7 ). In contrast, the touch input portion shown in FIG. 15 mayinclude a single conductive layer. Therefore, the touch electrodes 440and the trace lines 430 may include the same material.

FIG. 16 is a cross-sectional view illustrating the display device 1according to an embodiment of the present disclosure, FIG. 17 is anenlarged view illustrating a region XVII of FIG. 16 , and FIGS. 18A to18C are enlarged views of a region XVIII of FIG. 16 .

First, referring to the display area DA of FIG. 16 , the display layer200 is arranged on the substrate 100, and the thin-film encapsulationlayer 300 is arranged on the display layer 200. Specific configurationsof the substrate 100, the display layer 200, and the thin-filmencapsulation layer 300 may be the same as those described above withreference to FIG. 9 . For example, as shown in FIG. 17 , the thirdencapsulation layer 330 arranged on the second encapsulation layer 320including a polymer may include the first layer 331 and the second layer332, the first layer 331 including an inorganic insulating material, andthe second layer 332 including a silicon carbon compound material. Aspecific structure thereof is the same as that described above.

Referring to FIG. 17 and the display area DA of FIG. 16 , the touchsensing layer 400 may include the touch electrode 440 and the thirdtouch insulating layer 405, the touch electrode 440 being disposed onthe first touch insulating layer 401, and the third touch insulatinglayer 405 covering the touch electrode 440. Though the touch electrode440 is shown as a portion of the conductive layer CML in FIG. 15 , thetrace line 430 may also include an element of the conductive layer CMLand be located on the same layer (e.g. the first touch insulating layer)as the touch electrode 440.

The first touch insulating layer 401 may include a silicon carboncompound material. For example, the first touch insulating layer 401 mayinclude silicon oxycarbide (SiOC_(y)) or silicon oxide(SiO_(x)C_(y)H_(z)) containing carbon and hydrogen. As described above,the silicon carbon compound material may have properties of an organicmaterial. For example, the silicon carbon compound may be an organiclayer.

The auxiliary layer 412 may be arranged on a conductive layer, forexample, a bottom surface of the touch electrode 440 of the conductivelayer. In the case where the first touch insulating layer 401 includessilicon oxycarbide (SiOC_(y)), adhesive force between the first touchinsulating layer 401 and the conductive layer formed thereon, forexample, the touch electrode 440 of the conductive layer may bestrengthened. The auxiliary layer 412 may be also arranged on a bottomsurface of the trace line 430. The auxiliary layer 412 is not entirelyformed on the first touch insulating layer 401 and may be formed on onlya bottom surface of the first connection electrode 411 and the traceline 430. The auxiliary layer 412 may include an inorganic insulatinglayer, for example, a silicon nitride layer. For example, the auxiliarylayer 412 may be omitted.

Next, referring to the peripheral area PA of FIG. 16 , at least oneinorganic insulating layer 208 including the opening 2080P is arrangedin the peripheral area PA, the opening 2080P corresponding to the bentarea PAB. The opening 2080P may include the opening 201 a of the bufferlayer 201, the opening 203 a of the gate insulating layer 203, theopening 205 a of the first interlayer insulating layer 205, and/or theopening 207 a of the second interlayer insulating layer 207. A width OWof the opening 2080P may be greater than the width of the bent area PABas described above.

The organic insulating layer 215 may be formed in the bent area PAB. Theorganic insulating layer 215 may at least partially fill the opening2080P of at least one inorganic insulating layer 208. The organicinsulating layer 215 may include an organic insulating material such asbenzocyclobutene (BCB), polyimide, or hexamethyldisiloxane (HMDSO).

The thin-film encapsulation layer 300 may cover a portion of theperipheral area PA. For example, it is shown in FIG. 16 that the firstedge 300E1 of the thin-film encapsulation layer 300 is between thedisplay area DA and the bent area PAB. The second encapsulation layer320 of the thin-film encapsulation layer 300 may be arranged on one sideof a partition wall, for example, the first partition wall PW1. Thefirst encapsulation layer 310 and the third encapsulation layer 330 mayextend toward the outer side beyond at least one of the first partitionwall PW1 and the second partition wall PW2. The first encapsulationlayer 310 may contact the third encapsulation layer 330 in a regionneighboring the first edge 300E1 of the thin-film encapsulation layer300. Though it is shown in FIG. 16 that the first and thirdencapsulation layers 310 and 330 and the first and second partitionwalls PW1 and PW2 have substantially the same structures as thosedescribed above with reference to FIG. 9 , the structures of the firstand third encapsulation layers 310 and 330 and the first and secondpartition walls PW1 and PW2 described above with reference to FIGS. 13and 14 may be located in the peripheral area PA of FIG. 16 .

Referring to FIG. 18A, the first encapsulation layer 310 may include aninorganic insulating material, for example, an inorganic insulatingmaterial including silicon. For example, the first encapsulation layer310 may include silicon nitride (SiN_(x)), silicon oxide (SiO_(x)),and/or silicon oxynitride (SiON).

The third encapsulation layer 330 may include the first layer 331 andthe second layer 332, the first layer 331 including an inorganicinsulating material such as silicon nitride (SiN_(x)) and silicon oxide(SiO_(x)), and the second layer including a silicon carbon compoundmaterial such as silicon oxycarbide (SiOC_(y)). In an embodiment of thepresent disclosure, the third encapsulation layer 330 may have astructure in which the first layer 331 and the second layer 332 arealternately stacked as described above with reference to FIGS. 11A to11C.

Referring to FIGS. 18B and 18C, like the third encapsulation layer 330,the first encapsulation layer 310 may include the fifth layer 311 andthe sixth layer 312, the fifth layer 311 including an inorganicinsulating material, and the sixth layer 312 including a silicon carboncompound material. For example, the first encapsulation layer 310 mayhave a structure in which the fifth layer 311 and the sixth layer 312are alternately stacked. A lowermost layer of the first encapsulationlayer 310 may include the fifth layer 311 (see FIG. 18C) or the sixthlayer 312 (see FIG. 18B).

In the peripheral area PA, the first edge 300E1 of the thin-filmencapsulation layer 300 may be covered by an insulating layer of thetouch sensing layer 400, for example, the first touch insulating layer401. Because the first touch insulating layer 401 including a siliconcarbon compound material such as silicon oxycarbide (SiOC_(y)) may haveproperties of an organic layer, the first touch insulating layer 401 mayextend to pass across the bent area PAB. The first touch insulatinglayer 401 may be arranged on the connection portion 433 and may coverthe connection portion 433.

The inner portion 431 of the trace line shown in FIG. 16 includes aportion of the trace line 430 (see FIG. 15 ). The inner portion 431 ofthe trace line may be connected to the connection portion 433 through acontact hole passing through an insulating layer, for example, the firsttouch insulating layer 401 between the connection portion 433 and theinner portion 431. The connection portion 433 may be connected to theouter portion 432 through a contact hole passing through an insulatinglayer, for example, the second interlayer insulating layer 207 betweenthe outer portion 432 and the connection portion 433. Though it is shownin FIG. 16 that the outer portion 432 is located on the same layer asthe second electrode CE2 of the storage capacitor Cst and includes thesame material as the second electrode CE2, the outer portion 432 may belocated on the same layer as the first electrode CE of the storagecapacitor Cst or the first and second gate electrodes G1 and G2 and mayinclude the same material as the first electrode CE1 or the first andsecond gate electrodes G1 and G2.

The connection portion 433 may include a flexible conductive material,for example, aluminum compared to the inner portion 431 and the outerportion 432. For example, the connection portion 433 may include thesame material as the data line DL and/or the drain electrode SD (or thesource electrode) of the display area DA. In an embodiment of thepresent disclosure, the connection portion 433 may have a three-layeredstructure of a titanium layer/an aluminum layer/a titanium layer.

Though not shown in FIG. 16 , an organic insulating material layer maybe further arranged between the connection portion 433 and the firsttouch insulating layer 401 and/or on the second touch insulating layer403, the organic insulating material layer including a polymer. Theorganic insulating material layer may adjust a neutral surface of thedisplay device.

Because the thin-film encapsulation layer and/or the touch sensing layerarranged in the display area and bent together with the display areainclude a silicon carbon compound material, a display device which mayprevent damage caused by bending stress and effectively accomplishmoisture transmission prevention is provided. However, it should beunderstood that embodiments described herein should be considered in adescriptive sense only and not for limitation of the disclosure.

It should be understood that embodiments described herein should beconsidered in a descriptive sense and not necessarily limiting.Descriptions of features or aspects within each embodiment shouldtypically be considered as available for other similar features oraspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A display device, comprising: a display area; aperipheral area at least partially surrounding the display area; adisplay layer including a plurality of display elements arranged in thedisplay area; a thin-film encapsulation layer disposed on the displaylayer and including a first encapsulation layer, a second encapsulationlayer disposed on the first encapsulation layer, and a thirdencapsulation layer disposed on the second encapsulation layer; and atouch sensing layer disposed on the thin-film encapsulation layer andincluding a plurality of touch electrodes and a plurality of tracelines, wherein the display area is at least partially bent about abending axis, wherein the third encapsulation layer is bent along thebending axis of the display area and has a structure in which a firstlayer and a second layer are alternately stacked, the first layerincluding an inorganic insulating material, and the second layerincluding a silicon carbon ternary or quaternary compound material, andwherein the second layer including the silicon carbon ternary orquaternary compound material is thicker than the first layer includingthe inorganic insulating material.
 2. The display device of claim 1,wherein the second layer includes silicon oxycarbide (SiOC_(y)) orsilicon oxide (SiO_(x)C_(y)H_(z)) containing carbon and hydrogen.
 3. Thedisplay device of claim 2, wherein the first layer includes an inorganicinsulating material including silicon.
 4. The display device of claim 3,wherein the first layer includes silicon nitride, silicon oxide, orsilicon oxynitride.
 5. The display device of claim 1, wherein an edge ofthe first layer extends further toward the peripheral area than an edgeof the second layer extends towards the peripheral area.
 6. The displaydevice of claim 1, wherein the touch sensing layer includes: aconductive layer including at least one of the plurality of touchelectrodes or at least one of the plurality of trace lines; a firsttouch insulating layer disposed between the thin-film encapsulationlayer and the conductive layer, and a second touch insulating layer atleast partially covering the conductive layer and including an organicmaterial.
 7. The display device of claim 6, wherein the first touchinsulating layer includes an organic insulating material or a siliconcarbon compound material.
 8. The display device of claim 7, furthercomprising an auxiliary layer arranged on a bottom surface of theconductive layer facing the first touch insulating layer, the auxiliarylayer including an inorganic insulating material.
 9. The display deviceof claim 6, wherein the touch sensing layer further includes: a secondconductive layer disposed between the first touch insulating layer andthe second touch insulating layer; and a third touch insulating layerdisposed between the conductive layer and the second conductive layer.10. The display device of claim 9, wherein the third touch insulatinglayer includes a layer including an inorganic insulating material and alayer including a silicon carbon compound material.
 11. The displaydevice of claim 10, wherein a thickness of the layer including thesilicon carbon compound material is greater than a thickness of thelayer including the inorganic insulating material.
 12. The displaydevice of claim 6, wherein the peripheral area includes a bent area, andthe first touch insulating layer at least partially covers the bentarea.
 13. The display device of claim 12, wherein each of the pluralityof trace lines includes an inner portion, an outer portion, and aconnection portion, the inner portion and the outer portion beingrespectively arranged on two opposite sides of the bent area with thebent area disposed therebetween, and the connection portion beingconnected to both the inner portion and the outer portion throughcontact holes and connecting the inner portion to the outer portion. 14.The display device of claim 1, wherein the display area includes a maindisplay area, a plurality of lateral display areas, and a plurality ofedge display areas, the plurality of lateral display areas constitutingan image surface that is different from the main display area, and theplurality of edge display areas connecting the main display area to theplurality of lateral display areas.
 15. A display device, comprising: adisplay area; a peripheral area at least partially surrounding thedisplay area; a display layer including a plurality of display elementsdisposed in the display area; a thin-film encapsulation layer disposedon the display layer and including a first encapsulation layer, a secondencapsulation layer disposed on the first encapsulation layer, and athird encapsulation layer disposed on the second encapsulation layer; atouch sensing layer disposed on the thin-film encapsulation layer andincluding a conductive layer and a touch insulating layer, theconductive layer including a touch electrode or a trace line; and atleast one partition wall disposed in the peripheral area, wherein thedisplay area is at least partially bent about a bending axis, whereinthe second encapsulation layer includes an organic material, an edge ofthe second encapsulation layer is adjacent to the at least one partitionwall, wherein at least one of the first encapsulation layer, the thirdencapsulation layer, or the touch insulating layer includes a siliconcarbon compound material and extends toward the peripheral area beyondthe at least one partition wall, and wherein at least one of the firstencapsulation layer or the third encapsulation layer has a structure inwhich a first layer and a second layer are alternately stacked, thefirst layer including an inorganic insulating material that includessilicon but does not include carbon, and the second layer including asilicon carbon compound material.
 16. The display device of claim 15,wherein the second encapsulation layer includes an organic insulatingmaterial.
 17. The display device of claim 16, wherein a thickness of thesecond layer is greater than a thickness of the first layer.
 18. Thedisplay device of claim 16, wherein the first layer includes siliconnitride, silicon oxide, or silicon oxynitride, and wherein the secondlayer includes silicon oxycarbide (SiOCy) or silicon oxide (SiOxCyHz)containing carbon and hydrogen.
 19. The display device of claim 16,wherein the peripheral area includes a bent area and a pad, the padbeing spaced apart from the display area with the bent area of theperipheral area disposed therebetween, and wherein an edge of thethin-film encapsulation layer is disposed between the display area andthe bent area of the peripheral area.
 20. The display device of claim19, wherein an edge of the first layer extends further toward theperipheral area than an edge of the second layer extends towards theperipheral area.
 21. The display device of claim 15, wherein the touchinsulating layer includes a first touch insulating layer and a secondtouch insulating layer, the second touch insulating layer being disposedon the first touch insulating layer and including an organic insulatingmaterial, and wherein the conductive layer is disposed between the firsttouch insulating layer and the second touch insulating layer.
 22. Thedisplay device of claim 21, wherein the first touch insulating layerincludes a silicon carbon compound material, and wherein the displaydevice further includes: an auxiliary layer disposed on a bottom surfaceof the conductive layer facing the first touch insulating layer, theauxiliary layer contacting the first touch insulating layer and theconductive layer.
 23. The display device of claim 22, wherein theauxiliary layer includes an inorganic insulating material.
 24. Thedisplay device of claim 21, wherein the touch sensing layer furtherincludes: a second conductive layer disposed between the first touchinsulating layer and the second touch insulating layer; and a thirdtouch insulating layer disposed between the conductive layer and thesecond conductive layer.
 25. The display device of claim 24, wherein atleast one of the first touch insulating layer or the third touchinsulating layer includes a silicon carbon compound material.
 26. Thedisplay device of claim 25, wherein the third touch insulating layerincludes a layer including an inorganic insulating material and a layerincluding a silicon carbon compound material.
 27. The display device ofclaim 24, wherein the peripheral area includes a bent area, and whereinat least one of the first touch insulating layer or the second touchinsulating layer extends to the bent area of the peripheral area. 28.The display device of claim 27, wherein each of the plurality of tracelines includes an inner portion, an outer portion, and a connectionportion, the inner portion and the outer portion being respectivelyarranged on two opposite sides of the bent area with the bent areadisposed therebetween, and the connection portion being connected toboth the inner portion and the outer portion through contact holes andconnecting the inner portion to the outer portion.
 29. A display device,comprising: a substrate including a display area and a peripheral areaat least partially surrounding the display area, the display area of thesubstrate being bent about a bending axis; a thin-film encapsulationlayer disposed on the display area; a touch sensing layer disposed onthe thin-film encapsulation layer; and at least one partition walldisposed in the peripheral area, wherein the thin-film encapsulationlayer is bent along the bending axis, wherein a sub-layer of thethin-film encapsulation layer includes a repeating pattern of aplurality of inorganic insulating material layers and a plurality ofsilicon carbon ternary or quaternary compound material lavers andextends toward the peripheral area beyond the at least one partitionwall, and wherein an edge of one of the plurality of inorganicinsulating material layers extends further beyond an edge of one of theplurality of silicon carbon ternary or quaternary compound materiallayers located proximately below the one of the plurality of inorganicinsulating material layers.